发明名称 CROSS-POINT MEMORY BIAS SCHEME
摘要 The present disclosure relates to a cross-point memory bias scheme. An apparatus includes a memory controller including a word line (WL) control module and a bit line (BL) control module, the memory controller configured to initiate selection of a target memory cell; a sense module configured to determine whether the target memory cell has been selected; and a C-cell bias module configured to establish a C-cell bias if the target cell is not selected.
申请公布号 WO2015142550(A1) 申请公布日期 2015.09.24
申请号 WO2015US19373 申请日期 2015.03.09
申请人 INTEL CORPORATION 发明人 FRANKLIN, NATHAN;GULIANI, SANDEEP;TAUB, MASE;PANGAL, KIRAN
分类号 G11C8/08;G11C7/06 主分类号 G11C8/08
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