发明名称 INTEGRATED CIRCUITS AND METHODS FOR FORMING THE SAME
摘要 Provided is an integrated circuit including a first memory array and a logic circuit connected to the first memory array. All active transistors of all memory cells of the first memory array, and active transistors of the logic circuit are Fin field effect transistors (FinFETs), and have gate electrodes arranged in a first longitudinal direction.
申请公布号 KR20150108039(A) 申请公布日期 2015.09.24
申请号 KR20150128251 申请日期 2015.09.10
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIAW JHON JHY
分类号 H01L27/11;H01L29/78 主分类号 H01L27/11
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