| 摘要 |
PROBLEM TO BE SOLVED: To provide a sintered oxide in which the occurrence of crack during a bonding process can be suppressed, and a sputtering target using the sintered oxide.SOLUTION: There is provided the sintered oxide obtained by sintering: indium oxide; gallium oxide; and tin oxide, having a relative density of 90% or more, having an average crystal grain diameter of 3 μm or less of GaInSnOphase and having a ratio of less than 10% of course crystal grains having an average crystal grain diameter of 10 μm or more. When [In], [Ga], [Sn] denote the content ratio (atom %) of indium, gallium, tin per sum of the metal element contained in the sintered oxide, respectively, the sintered oxide satisfies 35 atom%≤[In]≤50 atom%, 20 atom%≤[Ga]≤35 atom%, and 20 atom%<[Sn]≤40 atom%, and the GaInSnOphase satisfies 0.02≤[GaInSnO]≤0.2. |
