| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion element having a high conversion efficiency.SOLUTION: The photoelectric conversion element comprises, between an n-type compound semiconductor layer and a back electrode, a p-type light absorption layer having chalcopyrite structure and containing Cu, at least one group IIIb element selected from a group consisting of Al, In and Ga, and at least one group IVb element selected from a group consisting of O, S, Se and Te. A gradient composition part where the group IIIb/Cu mole ratio, i.e. the ratio of the group IIIb element and the Cu, decreases from the interface with the n-type compound semiconductor layer toward the interface on the back electrode side, is provided at at least a part of the p-type light absorption layer. |
