| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique which is advantageous to reduction of residual transfer of charges in a radiation detection device having a conversion device in which the outer periphery of a semiconductor layer is located outside the outer periphery of an electrode.SOLUTION: A radiation detection device having plural pixels has: first electrode which are divided pixel by pixel; a conversion element containing a semiconductor layer and a second electrode; a switch element electrically connected to the first electrode; and a first insulating layer for separating conversion elements of adjacent pixels from each other. The semiconductor layer is disposed between the first electrode and the second electrode, and the outer periphery of the semiconductor layer is located at the outside of the outer periphery of the first electrode and the outer periphery of the second electrode. The semiconductor layer contains a first impurity semiconductor layer containing a part adjacent to the first electrode, a second impurity semiconductor layer containing a part adjacent to the second electrode and an intrinsic semiconductor layer between these impurity semiconductor layers. The first impurity semiconductor layer, the second impurity semiconductor layer, the pixel pitch of the plural pixels and the ON-resistance of the switch element satisfy predetermined conditions. |
