| 发明名称 |
VERTICAL NITRIDE SEMICONDUCTOR DEVICE |
| 摘要 |
A vertical semiconductor device and a method of forming the same. A vertical semiconductor device has a substrate that includes a first material, a first electrode below the substrate, and at least one semiconductor region. The at least one semiconductor region includes a second material different from the first material. The second material is a III-nitride semiconductor material. The at least one semiconductor region is formed over the substrate. The vertical semiconductor device also has a second electrode over the at least one semiconductor region. |
| 申请公布号 |
US2015270356(A1) |
申请公布日期 |
2015.09.24 |
| 申请号 |
US201514662837 |
申请日期 |
2015.03.19 |
| 申请人 |
Massachusetts Institute of Technology |
发明人 |
Palacios Tomas Apostol;Zhang Yuhao |
| 分类号 |
H01L29/20;H01L21/02;H01L21/283;H01L29/417 |
主分类号 |
H01L29/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A vertical semiconductor device, comprising:
a substrate comprising a first material; a first electrode below the substrate; at least one semiconductor region comprising a second material different from the first material, the second material being a III-nitride semiconductor material, the at least one semiconductor region being formed over the substrate; and a second electrode over the at least one semiconductor region. |
| 地址 |
Cambridge MA US |
