发明名称 CURRENT AND TEMPERATURE SENSING OF STANDARD FIELD-EFFECT TRANSISTORS
摘要 <p>An apparatus and method of determining the junction temperature (Tj) and drain-source current (Ids) of a standard FET within a multi-FET module includes a control IC managing one or more 3 terminal standard FETs within the same package, calculating Tj and Tds for one or more FETs in one or more packages, and protecting each FET against short circuit faults while allowing high current transients, such as inrush currents from a lamp load.</p>
申请公布号 EP2318817(A4) 申请公布日期 2015.09.23
申请号 EP20090800999 申请日期 2009.07.23
申请人 DELPHI TECHNOLOGIES, INC. 发明人 GLENN, JACK, L.;GOSE, MARK, W.;LAUBENSTEIN, PETER, A.;ZARABADI, SEYED
分类号 G01K7/01;G01K7/42 主分类号 G01K7/01
代理机构 代理人
主权项
地址