METHOD FOR PREPARING GRAPHENE USING OVERLAPPING AND METHOD FOR FABRICATING ELECTRONICS COMPRISING THE GRAPHENE

摘要

The present invention relates to a graphene preparing method. The method includes the steps of: stacking and overlapping thin-films having a metal catalyst layer to prepare an overlapped body (step a); and conducting a chemical vapor deposition operation to prepare graphene on the metal catalyst layer (step b). The present invention can promote movement of metal catalyst molecules in a chemical vapor deposition apparatus and prevent evaporation of a metal catalyst by using the influence of an overlapped substrate. The present invention also reduces the size of grain boundaries which are micro units on the surface of the metal catalyst to enhance transparency. The present invention can also synthesize graphene sheets grown at various carbon source gas concentration rates. The present invention also enables mass production within a limited space in the chemical vapor deposition apparatus efficiently.