UNIT PIXEL OF IMAGE SENSOR, IMAGE SENSOR INCLUDING THE SAME AND METHOD OF MANUFACTURING IMAGE SENSOR

摘要

A unit pixel of an image sensor includes a photoelectric conversion region, a first floating expansion region, a transfer gate, a second floating expansion region, and a dual conversion gain gate. The photoelectric conversion region is formed within a semiconductor substrate and collects photo-charges based on incidence rays. The first floating expansion region is formed within the semiconductor substrate while being separated from the photoelectric conversion region. The transfer gate is formed on the semiconductor substrate and transfers the photo-charges to the first floating expansion region based on a transfer control signal. The second floating expansion region is formed within the semiconductor substrate while being separated from the first floating expansion region. The dual conversion gain gate is formed in the vertical direction from a first side of the semiconductor substrate to be adjacent to the first and second floating expansion regions, and selectively transfers the photo-charges to the second floating expansion region based on a dual conversion gain control signal.