| 摘要 |
A resistive sensor, particularly a chemical sensor with at least one layer of a metal oxide arranged between two electrodes, is described with a resistive sensing element (Rsens,10-1) and a resistive reference element (Rref,10-2) each biased by a voltage such as a common on-chip voltage is described wherein the currents (Is, Ir) though the elements a converted by a translinear I-V convertor (12-1,12-2) to generate an output proportional to the logarithm of the resistance of the sensing element scaled be the resistance of the reference element, with a temperature dependence removed optionally in an analogue-digital (A-D) convertor (16) using a PTAT voltage as reference voltage. |
