<p>Described herein are methods for forming silicon nitride films. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH 3 group described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and/or an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm 2 .</p>
申请公布号
EP2857552(A3)
申请公布日期
2015.09.23
申请号
EP20140187603
申请日期
2014.10.03
申请人
AIR PRODUCTS AND CHEMICALS, INC.
发明人
CHANDRA, HARIPIN;MALLIKARJUNAN, ANUPAMA;LEI, XINJIAN;KIM, MOO-SUNG;CUTHILL, KIRK SCOTT;O'NEILL, MARK LEONARD