SEMICONDUCTOR DEVICE, DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE, DISPLAY MODULE INCLUDING THE DISPLAY DEVICE, AND ELECTRONIC APPLIANCE INCLUDING THE SEMICONDUCTOR DEVICE, THE DISPLAY DEVICE, AND THE DISPLAY MODULE

摘要

The assignment of the present invention, regarding a semiconductor device including a transistor having an oxide semiconductor, is to inhibit change of electrical properties and improve reliability at the same time. As a semiconductor device including a transistor, the transistor is formed on the top of a first insulation film, which comprises: an oxide semiconductor film on the top of the first insulation film; a gate insulation film on the top of the oxide semiconductor film; a gate electrode on the gate insulation film; a second insulation film on the oxide semiconductor film and the gate electrode; and a source electrode and a drain electrode electronically accessed with the oxide semiconductor film. The oxide semiconductor film has a first area adjacent to the gate insulation film and a second area adjacent to the second insulation film, with the first insulation film having oxygen and the second insulation film having hydrogen, and the first insulation film having a third area overlapped with the first area and a fourth area overlapped with the second area, wherein a concentration of element of impurities of the fourth area is higher than the third area.