OXIDE SINTER, SPUTTERING TARGET USING SAME, AND OXIDE FILM

摘要

To provide an oxide sintered body for a sputtering target, which is capable of adding specific elements to from an n-type semiconductor layer to a p-type semiconductor layer surface of a compound thin-film solar cell. An oxide sintered body which contains zinc (Zn) and at least one type of element (X) (excluding a case where magnesium is added alone) that has an ionization potential Ip of 4.5 eV‰¦Ip‰¦8.0 eV and an atomic radius d of 1.20 ʼn¦d‰¦2.50 Å and which has a composition ratio (atomic ratio) of 0.0001‰¦X/(Zn+X)‰¦0.20 and a sintered density of at least 95%.