发明名称 |
TRANSISTOR WITH COUNTER-ELECTRODE CONNECTION WITH THE SOURCE/DRAIN CONTACT |
摘要 |
<p>The field effect device includes an active area made from semi-conducting material and a gate electrode separated from the active area by a dielectric gate material. A counter-electrode is separated from the active area by a layer of electrically insulating material. Two source/drain contacts are arranged on the active area on each side of the gate electrode. One of the source/drain contacts is made from a single material, overspills from the active area and connects the active area with the counter-electrode. The counter-electrode contact is delineated by a closed peripheral insulating pattern.</p> |
申请公布号 |
EP2599111(B1) |
申请公布日期 |
2015.09.23 |
申请号 |
EP20100737725 |
申请日期 |
2010.07.27 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES;STMICROELECTRONICS, INC. |
发明人 |
VINET, MAUD;LIU, QING |
分类号 |
H01L21/336;H01L21/74;H01L21/768;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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