HF-MEMS switch

摘要

The switch (10) has a switching element (18), whose one end is attached on a high resistive silicon substrate (12). A connector contact (24) guides charging carriers into the substrate, where electric field is produced between the switching element and the substrate for producing electrostatic bending force on the switching element. An implantation zone (20) is formed in the substrate directly under an isolator layer (14). The zone is contacted with the connector contact that is arranged outside the isolator layer via an opening (22) in the layer and exhibits ohmic contact to the substrate.