MOS transconductance gain boosting techniques in millimeter-wave range

摘要

The present disclosure relates to a semiconductor device, such as a transistor. The device includes a gate terminal, a source terminal, a drain terminal, a transconductance component, and a boost component. The gate terminal is configured to receive a bias voltage. The drain terminal is coupled to the boost component. The transconductance component is coupled to the gate terminal, the source terminal and the drain terminal and provides an output current proportional to the bias voltage. The boost component is coupled to the transconductance component and boosts the output current at a selected frequency range.

主权项

1. A semiconductor device comprising:
a drain terminal; a source terminal; a gate terminal configured to receive a bias voltage; a transconductance component coupled to the gate terminal and the source terminal, wherein the transconductance component is configured to provide an output current proportional to changes to the bias voltage, the output current is provided at the drain terminal; a drain boost component coupled to the transconductance component and the drain terminal, wherein the drain boost component includes a drain inductor, and wherein the drain boost component is configured to boost the output current at a first selected frequency range by a first amount; and a gate boost component coupled to the transconductance component and the gate terminal, wherein the gate boost component is configured to boost the output current at a second selected frequency range by a second amount.