FINFET devices having a body contact and methods of forming the same

摘要

Fin field-effect transistor devices and methods of forming the fin field-effect transistor devices are provided herein. In an embodiment, a fin field-effect transistor device includes a semiconductor substrate that has a fin. A gate electrode structure overlies the fin. Source and drain halo and/or extension regions and epitaxially-grown source regions and drain regions are formed in the fin and are disposed adjacent to the gate electrode structure. A body contact is disposed on a contact surface of the fin, and the body contact is spaced separately from the halo and/or extension regions and the epitaxially-grown source regions and drain regions.

主权项

1. A fin field-effect transistor device comprising:
a semiconductor substrate having a fin; a gate electrode structure overlying the fin; first sidewall spacers disposed on sidewalls of the gate electrode structure; source and drain halo and/or extension regions and epitaxially-grown source regions and drain regions formed in or on the fin and disposed adjacent to the gate electrode structure; and a body contact disposed on a contact surface of the fin, wherein the body contact is spaced separately from the halo and/or extension regions and the epitaxially-grown source regions and drain regions; a contact insulating layer disposed over the fin, between the body contact and the halo and/or extension regions; and a contact capping layer disposed over the body contact and the contact insulating layer.