发明名称 Methods of making an interposer structure with embedded capacitor structure
摘要 A device is disclosed which includes an interposer, at least one capacitor formed at least partially within an opening formed in the interposer and an integrated circuit that is operatively coupled to the interposer. A method is disclosed which includes obtaining an interposer having at least one capacitor formed at least partially within an opening in the interposer and operatively coupling an integrated circuit to the interposer. A method is also disclosed which includes obtaining an interposer comprising a dielectric material, forming an opening in the interposer and forming a capacitor that is positioned at least partially within the opening.
申请公布号 US9142427(B2) 申请公布日期 2015.09.22
申请号 US201414180567 申请日期 2014.02.14
申请人 Micron Technology, Inc. 发明人 Chong Chin Hui;Corisis David J.;Lee Choon Kuan
分类号 H01L29/00;H01L21/4763;H01L21/48;H01L23/50;H01L23/00;H01L49/02 主分类号 H01L29/00
代理机构 Perkins Coie LLP 代理人 Perkins Coie LLP
主权项 1. A method of forming a capacitor in an interposer, comprising: forming a first opening through a thickness of the interposer; forming a conductive material on an inner surface of the first opening to at least partially define a first conductive structure of the capacitor; forming a dielectric material on an inner surface of the first conductive structure; forming a second opening that extends through the dielectric material; forming a conductive material within the second opening and on an inner surface of the dielectric material to at least partially define a second conductive structure of the capacitor; and forming an insulating material within the second conductive structure.
地址 Boise ID US