发明名称 |
Liquid precursor for deposition of indium selenide and method of preparing the same |
摘要 |
Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and method of depositing a liquid precursor on a substrate are also disclosed. |
申请公布号 |
US9142408(B2) |
申请公布日期 |
2015.09.22 |
申请号 |
US201113136982 |
申请日期 |
2011.08.16 |
申请人 |
Alliance for Sustainable Energy, LLC |
发明人 |
Curtis Calvin J.;Miedaner Alexander;van Hest Marinus Franciscus Antonius Maria;Ginley David S.;Hersh Peter A.;Eldada Louay;Stanbery Billy J. |
分类号 |
H01L21/02;C23C18/12;H01L31/032;H01L31/20 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
Stolpa John C.;McIntyre Michael A.;Walts Suzanne C. |
主权项 |
1. A method of preparing a liquid indium selenide precursor, the method comprising:
reducing elemental selenium with a stoichiometric amount of hydrazine in the presence of a first solvent to yield a first solution comprising Se22−; and combining the first solution with a second solution comprising an indium salt and a second solvent to yield the liquid indium selenide precursor comprising a suspension of indium selenide particles, wherein the liquid indium selenide precursor is substantially hydrazine-free. |
地址 |
Golden CO US |