发明名称 Liquid precursor for deposition of indium selenide and method of preparing the same
摘要 Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and method of depositing a liquid precursor on a substrate are also disclosed.
申请公布号 US9142408(B2) 申请公布日期 2015.09.22
申请号 US201113136982 申请日期 2011.08.16
申请人 Alliance for Sustainable Energy, LLC 发明人 Curtis Calvin J.;Miedaner Alexander;van Hest Marinus Franciscus Antonius Maria;Ginley David S.;Hersh Peter A.;Eldada Louay;Stanbery Billy J.
分类号 H01L21/02;C23C18/12;H01L31/032;H01L31/20 主分类号 H01L21/02
代理机构 代理人 Stolpa John C.;McIntyre Michael A.;Walts Suzanne C.
主权项 1. A method of preparing a liquid indium selenide precursor, the method comprising: reducing elemental selenium with a stoichiometric amount of hydrazine in the presence of a first solvent to yield a first solution comprising Se22−; and combining the first solution with a second solution comprising an indium salt and a second solvent to yield the liquid indium selenide precursor comprising a suspension of indium selenide particles, wherein the liquid indium selenide precursor is substantially hydrazine-free.
地址 Golden CO US