发明名称 Method of forming a pattern
摘要 A method of forming a pattern includes defining a plurality of patterns, defining a plurality of pitch violating patterns that contact the plurality of patterns and correspond to regions between the patterns, classifying the plurality of pitch violating patterns into a first region and a second region that is adjacent to the first region, selecting one of the first region and the second region, and forming an initial pattern defined as the selected first or second region. The selecting includes performing at least one of i) selecting a region that contact dummy patterns, ii) selecting a region of a same kind as one region, and iii) selecting a region that contacts a concave part of an enclosure from the first region and the second region.
申请公布号 US9141751(B2) 申请公布日期 2015.09.22
申请号 US201313950799 申请日期 2013.07.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Lee Hyun-Jong;Choi Soo-Han;Do Jung-Ho;Park Chul-Hong;Sim Sang-Pil
分类号 G06F17/50;H01L21/308 主分类号 G06F17/50
代理机构 F. Chau & Associates, LLC 代理人 F. Chau & Associates, LLC
主权项 1. A method of forming a pattern, the method comprising: defining a plurality of patterns for exposure using an exposure apparatus, the exposure apparatus having a predetermined minimum pitch; defining a plurality of pitch violating patterns that contact the plurality of patterns and correspond to regions between the patterns that are smaller than the predetermined minimum pitch of the exposure apparatus; classifying the plurality of pitch violating patterns into a first region and a second region by assigning proximate pitch violating patterns to different regions of the first and second region such that, when looking at the individual regions, neither the first region nor the second region includes patterns that are closer to each other than the predetermined minimum pitch; selecting one of the first region and the second region; and forming an initial pattern defined as the selected first or second region, wherein the selecting comprises performing at least one of i) selecting a region that contacts dummy patterns, ii) selecting a region of a same kind as one region, and iii) selecting a region that contacts a concave part of an enclosure from the first region and the second region.
地址 Suwon-Si, Gyeonggi-Do KR