发明名称 Semiconductor multi-project or multi-product wafer process
摘要 The embodiment provides a semiconductor MP wafer process including processing a plurality of MP wafers in a lot or batch with a first process step. The plurality of the MP wafers is split into an MP wafer group-1 and an MP wafer group-2. At least one of the MP wafers of the MP wafer group-1 is processed with a second process step-1 and at least one of the MP wafers of the MP wafer group-2 is processed with a second process step-2 to form different device components on the MP wafers of the MP wafer group-1 and group-2, respectively. At least one of the MP wafers of the MP wafer group-1 is processed with a third process step-3 and at least one of the MP wafers of the MP wafer group-2 is processed with a third process step-4 to form a substantially same device component on the MP wafers.
申请公布号 US9140978(B2) 申请公布日期 2015.09.22
申请号 US201113228237 申请日期 2011.09.08
申请人 发明人 Ken Weng-Dah
分类号 H01L21/50;G03F1/50;H01L25/065;H01L25/18;H01L23/00;G03F7/00;H01L25/00 主分类号 H01L21/50
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. A semiconductor MP wafer process, comprising: processing an MP wafer with a first process step; defining a wafer zone-1 and a wafer zone-2 of the MP wafer; processing the wafer zone-1 of the MP wafer with a second process step-1 and processing the wafer zone-2 of the MP wafer with a second process step-2, wherein the second process step-1 and the second process step-2, respectively, forming different semiconductor device components on the wafer zone-1 and the wafer zone-2 of the MP wafer, and wherein the second process step-1 and the second process step-2 are processed after the first process step is completed; and processing the MP wafer with a subsequent process to fabricate a finished MP wafer, wherein after the subsequent process is completed, the wafer zone-1 and the wafer zone-2 are not destroyed.
地址 Hsinchu TW