| 摘要 |
A semiconductor device includes a transistor (121), a diode (122), a first detection circuit (152), a second detection circuit (153), a calculation circuit (154), and a judgment circuit (155). The diode is connected to the transistor in anti-parallel. The first detection circuit is formed to detect a rate of change in a gate voltage of the transistor for time and the second detection circuit is formed to detect a gate current of the transistor. The calculation circuit is formed to calculate a gate capacity based on the gate current and the rate of change in the gate voltage for time. The judgment circuit is formed to judge whether or not a current flows into the transistor or the diode based on the judgment result of the gate capacity when charges are injected into a gate of the transistor. |
