METHOD FOR GROWING EPITAXIAL LAYER AND SEMICONDUCTOR STRUCTURE
摘要
<p>Provided in an embodiment is a method for growing an epitaxial layer, which comprises the following steps: preparing a substrate including protrusions on the surface; amorphizing a part of the protrusions; and growing an epitaxial layer on the substrate.</p>
申请公布号
KR20150106568(A)
申请公布日期
2015.09.22
申请号
KR20140028784
申请日期
2014.03.12
申请人
LG INNOTEK CO., LTD.;KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
