发明名称 Semiconductor structure and method for manufacturing the same
摘要 A semiconductor structure and a method for manufacturing the same are disclosed. The semiconductor structure includes a substrate, a first conductive structure, a second conductive structure, a dielectric structure, a dielectric layer, a first conductive plug, and a second conductive plug. The first conductive plug passes through only an upper dielectric portion of the dielectric structure, the dielectric layer and a lower dielectric portion of the dielectric structure to physically and electrically contact with the first conductive structure. The second conductive plug passes through the upper dielectric portion, the dielectric layer and the lower dielectric portion to physically and electrically contact with the second conductive structure.
申请公布号 US9142454(B1) 申请公布日期 2015.09.22
申请号 US201414215149 申请日期 2014.03.17
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 Lee Guan-Ru;Jiang Yu-Wei
分类号 H01L21/44;H01L21/768;H01L23/48 主分类号 H01L21/44
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. A method for manufacturing a semiconductor structure, comprising: forming a first conductive structure on a substrate; forming a second conductive structure on the substrate, the second conductive structure comprising an upper conductive portion, wherein the upper conductive portion has a material different from a material of the first conductive structure; forming a lower dielectric portion of a dielectric structure on the first conductive structure and the second conductive structure; forming a dielectric layer on the lower dielectric portion; forming an upper dielectric portion of the dielectric structure on the dielectric layer, wherein the dielectric layer has a material different from materials of the upper dielectric portion and the lower dielectric portion; forming a first conductive plug passing through only the upper dielectric portion, the dielectric layer and the lower dielectric portion to physically and electrically contact with the first conductive structure; and forming a second conductive plug passing through the upper dielectric portion, the dielectric layer and the lower dielectric portion to physically and electrically contact with the second conductive structure; wherein the first conductive plug and the second conductive plug have different aspect ratios.
地址 Hsinchu TW