| 主权项 |
1. A thin-film light emitting diode, comprising:
a substrate; a metal layer formed on a lower surface of the substrate for mounting on a sub-mount; a conductive adhesive layer formed on an upper surface of the substrate; a reflective electrode formed on the conductive adhesive layer, wherein the conductive adhesive layer and the reflective electrode are metal and together form a metallic current spreading layer, and an entire edge of the metallic current spreading layer is recessed from an edge of the substrate so as to form a recessed portion; an epitaxial structure on the reflective electrode, the epitaxial structure comprising an n-type GaN-based layer, a p-type GaN-based layer and an active region between the n-type GaN-based layer and the p-type GaN-based layer, the p-type GaN-based layer disposed between the active region and the metallic current spreading layer, wherein a part of the epitaxial structure is removed so as to form a mesa and expose an upper surface of the metallic current spreading layer; and a pad contact formed on the exposed upper surface of the metallic current spreading layer for a bonding wire. |
