发明名称 |
Devices and methods of forming bulk FinFETS with lateral seg for source and drain on dielectrics |
摘要 |
Devices and methods for forming semiconductor devices with FinFETs are provided. One intermediate semiconductor device includes, for instance: a substrate with at least one fin with at least one channel; at least one gate over the channel; at least one hard-mask over the gate; and at least one spacer disposed over the gate and hard-mask. One method includes, for instance: obtaining an intermediate semiconductor device; forming at least one recess into the substrate, the recess including a bottom and at least one sidewall exposing a portion of the at least one fin; depositing a dielectric layer into the at least one recess; removing at least a portion of the dielectric layer to form a barrier dielectric layer; and performing selective epitaxial growth in the at least one recess over the barrier dielectric layer. |
申请公布号 |
US9142673(B2) |
申请公布日期 |
2015.09.22 |
申请号 |
US201313955861 |
申请日期 |
2013.07.31 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Liu Jin Ping;Chi Min-hwa |
分类号 |
H01L21/336;H01L29/78;H01L29/66 |
主分类号 |
H01L21/336 |
代理机构 |
Heslin Rothenberg Farley & Mesiti P.C. |
代理人 |
Heslin Rothenberg Farley & Mesiti P.C. |
主权项 |
1. A method comprising:
obtaining an intermediate semiconductor device, comprising:
a substrate with at least one fin comprising at least one channel;at least one gate over the at least one channel;at least one hard-mask over the at least one gate; andat least one spacer disposed over the at least one gate and at least one hard-mask; forming at least one recess into the substrate, wherein the recess comprises a bottom and at least one sidewall exposing a portion of the at least one fin; depositing a first dielectric layer into the at least one recess; performing chemical mechanical planarization on the first dielectric layer; applying a first hard mask layer over the first dielectric layer; performing a first dry etch over the first hard mask layer to create a first barrier dielectric layer and expose at least a portion of the at least one sidewalls of the at least one fin; depositing a second dielectric layer over the intermediate semiconductor device; applying a second hard mask layer over the second dielectric layer; performing a second dry etch over the second hard mask layer to create a second barrier dielectric layer and expose at least a portion of the at least one sidewalls of the at least one fin; and performing selective epitaxial growth in the at least one recess over the barrier dielectric layer. |
地址 |
Grand Cayman KY |