Semiconductor device and method for manufacturing same

摘要

According to one embodiment, a method for manufacturing a semiconductor device includes: forming a plurality of trenches; forming a gate insulating film; burying a gate electrode; burying an insulating member; projecting the insulating member; forming a base layer; forming a mask film; forming a first semiconductor layer; forming a carrier ejection layer; forming a first electrode; and forming a second electrode. The projecting includes projecting the insulating member from the upper surface of the semiconductor substrate by removing an upper layer portion of the semiconductor substrate. The mask film is formed so as to cover the projected insulating member. The forming the first semiconductor layer includes forming a first semiconductor layer of the first conductivity type in an upper layer portion of the base layer by doping the base layer with impurity, the upper layer portion having a lower surface below an upper end of the gate electrode.

主权项

1. A semiconductor device comprising:
a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided on the first semiconductor layer; a third semiconductor layer of the first conductivity type selectively provided on the second semiconductor layer; a gate electrode provided in the first semiconductor layer, the second semiconductor layer and the third semiconductor layer via a gate insulating film; an insulating layer provided on the gate electrode; a fourth semiconductor layer of the first conductivity type, a first distance between an upper end of the fourth semiconductor layer and the first semiconductor layer being greater than a second distance between an upper end of the insulating layer and the first semiconductor layer; a first electrode connected to the first semiconductor layer; and a second electrode connected to the third semiconductor layer and the fourth semiconductor layer.