Graphene electronic device and method of fabricating the same

摘要

The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.

主权项

1. A method of fabricating a graphene electronic device, the method comprising:
forming a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode; forming a first metal layer on the gate oxide, the first metal layer configured to function as a catalyst layer; forming a graphene layer on the first metal layer; forming a metal protection layer on the graphene layer; sequentially patterning the metal protection layer, the graphene layer, and the first metal layer using a first photoresist pattern; and exposing the graphene layer in a channel formation region by wet etching the metal protection layer and the first metal layer using a second photoresist pattern.