Method of growing nitride semiconductor layer, nitride semiconductor device, and method of fabricating the same

摘要

Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regions, and growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer.

主权项

1. A nitride semiconductor device, comprising:
a gallium nitride substrate comprising non-defect regions, a first defect region disposed between the non-defect regions, and a second defect region extending from the first defect region; a gallium nitride-based defect dispersion suppressing layer disposed on the gallium nitride substrate, and a gallium nitride semiconductor layer disposed on the defect dispersion suppressing layer, wherein a width of the second defect region on a surface of the gallium nitride semiconductor layer does not exceed two times a width of the first defect region, wherein the gallium nitride substrate comprises a semi-polar or non-polar substrate, and the non-defect regions comprise different off-angles with respect to a [0001] direction.