Semiconductor nano layer structure and manufacturing method thereof

摘要

A method for manufacturing a semiconductor nano layer structure includes: two substrates are provided; a plurality of semiconductor nanowires are formed on one of the substrates; an absorption surface is formed on the other substrate; one of the substrates is fixed on a cylindrical roller, the cylindrical roller is brought into contact with a surface of the substrate which is stationary and is not fixed on the cylindrical roller, and rolled with a constant velocity and pressure so that the semiconductor nanowires are break, detached, transferred and absorbed, and a semiconductor nano layer structure is formed on the stationary substrate; a de-laminating process is performed to separate the semiconductor nano layer structure from the second substrate; an electric Joule heat welding process is locally performed to bond each of the semiconductor nanowires of the semiconductor nano layer structure or each semiconductor nano layer structure.

主权项

1. A method for manufacturing a semiconductor nano layer structure, comprising:
providing a solution having a plurality of semiconductor nanowires; locating a filter and a screening membrane in the solution; flowing, the solution and activating the screening membrane relative to the filter to crossly arrange the semiconductor nanowires on the filter via the screening membrane; forming at least one semiconductor membrane by crossly arranging the semiconductor nanowires on the filter, wherein each of the semiconductor nanowires is crossly interweaved with one another at a specified angle or any angles; stacking or connecting each semiconductor membrane to form a semiconductor nano layer structure; performing a drying process for removing water; lifting-off the semiconductor nano layer structure from the filter; locally performing an electric Joule heat welding process to bond each of the semiconductor nanowires of the semiconductor nano layer structure or each semiconductor nano layer structure.