Method for chemical vapor deposition control

摘要

A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.

主权项

1. A method of depositing a thin film on a substrate in a deposition system, comprising:
disposing a gas heating device comprising a plurality of heating element zones in a deposition system, each of said plurality of heating element zones being defined to be an arrangement of one or more resistive heating elements electrically independent from said one or more resistive heating elements of each other of said plurality of heating element zones; providing a substrate on a substrate holder in said deposition system, wherein said substrate holder comprises a plurality of temperature control zones, and each of said plurality of temperature control zones uniquely corresponds to each of said plurality of heating element zones; independently controlling a temperature of each of said plurality of heating element zones and a temperature of said substrate at each of said plurality of uniquely corresponding temperature control zones; differentially spacing or orienting each of said plurality of heating element zones from each uniquely corresponding temperature control zone of said substrate holder to control a diffusion path length or a diffusion path orientation between a reaction zone at each of said plurality of heating element zones to a surface of said substrate so that at least one heating element zone is at a different diffusion path length or diffusion path orientation as compared to at least one other of said heating element zones; providing a film forming composition to said gas heating device coupled to said deposition system; pyrolizing one or more constituents of said film forming composition using said gas heating device; and introducing said film forming composition to said substrate in said deposition system to deposit a thin film on said substrate.