Method and apparatus for in-line process control of the cigs process

摘要

An in-line production apparatus and a method for composition control of copper indium gallium diselenide (CIGS) solar cells fabricated by a co-evaporation deposition process. The deposition conditions are so that a deposited Cu-excessive overall composition is transformed into to a Cu-deficient overall composition, the final CIGS film. Substrates with a molybdenum layer move through the process chamber with constant speed. The transition from copper rich to copper deficient composition on a substrate is detected by using sensors which detect a physical parameter related to the transition. A preferred embodiment sensors are provided that detect the composition of elements in the deposited layer. A controller connected to the sensors adjusts the fluxes from the evaporant sources in order provide a CIGS layer with uniform composition and thickness over the width of the substrate.

主权项

1. An in-line continuous substrate flow production apparatus for fabrication of copper indium gallium diselenide (CIGS) solar cells, comprising:
a CIGS process chamber comprising a deposition zone (DZ) therein, the deposition zone configured for substrates provided with a molybdenum back contact layer to be continuously moved therethrough, the process chamber further comprising: a plurality of separated substrate heaters, evaporation sources with Cu, In, Ga and Se, the evaporation sources configured to produce evaporant fluxes for depositing respective amounts of Cu, In, Ga and Se to a substrate, the evaporation sources provided in respective rows over a width of the substrate, source heaters provided with said evaporation sources, at least one composition detection device for detecting, in a deposited CIGS film at each of the rows, respective amounts of elements deposited by said evaporation sources, and a controller connected to said at least one composition detection device, the controller adapted to adjust the evaporant fluxes in each of the respective rows in response to a detected variation, in the CIGS film, of the respective amounts deposited of each element in order to provide a CIGS layer having a uniform composition of elements.