FinFET having gate in place of sacrificial spacer source/drain mask

摘要

A FinFET and a method for manufacturing the same are disclosed. In one aspect, the method comprises forming a semiconductor fin having trapezoid cross-section. The method also includes forming one of a source region and a drain region. The method also includes forming a sacrificial spacer. The method also includes forming another one of the source region and the drain region using the sacrificial spacer as a mask. The method also includes removing the sacrificial spacer. The method also includes forming a gate stack in place of the sacrificial spacer, the gate stack comprising a gate conductor and a gate dielectric isolating the gate conductor from the semiconductor fin.

主权项

1. A method of manufacturing a FinFET, comprising:
forming a semiconductor fin having a trapezoid cross-section; forming one of a source region and a drain region using a first mask layer as a hard mask; forming a sacrificial spacer, wherein forming the sacrificial spacer comprises:
forming a second mask layer adjoining the first mask layer;removing the first mask layer to expose a sidewall of the second mask layer; andforming the sacrificial spacer on the exposed sidewall of the second mask layer; forming another one of the source region and the drain region using the sacrificial spacer as a mask; removing the sacrificial spacer; and forming a gate stack in place of the sacrificial spacer, the gate stack comprising:
a gate conductor; anda gate dielectric isolating the gate conductor from the semiconductor fin.