Semiconductor component with a semiconductor via

摘要

A method for producing a semiconductor component includes providing a semiconductor body with a first surface and a second surface opposite the first surface, forming an insulation trench which extends into the semiconductor body from the first surface and which in a horizontal plane of the semiconductor body has a geometry such that the insulation trench defines a via region of the semiconductor body, forming a first insulation layer on one or more sidewalls of the insulation trench, removing semiconductor material of the semiconductor body from the second surface to expose at least parts of the first insulation layer, to remove at least parts of the first insulation layer, or to leave at least partially a semiconductor layer with a thickness of less than 1 μm between the first insulation layer and the second surface, and forming first and second contact electrodes on the via region.

主权项

1. A semiconductor component, wherein the semiconductor component is implemented as an MOS transistor, the semiconductor component comprising:
a semiconductor body with a first surface and a second surface; a first contact electrode in a region of the first surface; a second contact electrode in a region of the second surface; a first insulation layer defining a via region in a horizontal direction of the semiconductor body; a monocrystalline semiconductor region arranged in the via region and extending between the first contact electrode and the second contact electrode; a gate electrode electrically connected to the first contact electrode in the region of the first surface; a source region arranged below the first surface; a source electrode electrically connected to the source region, electrically insulated from the gate electrode, and arranged at least partially above the first surface; and a drain electrode electrically insulated from the second contact electrode on the second surface, wherein the MOS transistor comprises a gate terminal formed by the second contact electrode arranged on the second surface, wherein the gate terminal is electrically connected to a gate-electrode of the MOS transistor through the via region, and wherein the gate-electrode is formed next to the first surface and disposed outside of the via region.