Integrated circuits and methods for fabricating integrated circuits with silicide contacts on non-planar structures

摘要

Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate and forming fins over the semiconductor substrate. Each fin is formed with sidewalls. The method further includes conformally depositing a metal film stack on the sidewalls of each fin. In the method, the metal film stack is annealed to form a metal silicide film over the sidewalls of each fin.

主权项

1. A method for fabricating an integrated circuit comprising:
providing a semiconductor substrate; forming fins over the semiconductor substrate, wherein each fin is formed from semiconductor material, and wherein the semiconductor material of each fin has sidewalls; forming a silicon layer on the sidewalls of each fin; conformally depositing a metal film on the sidewalls of the semiconductor material of each fin; and annealing the metal film to form a metal silicide film on the sidewalls of the semiconductor material of each fin, wherein formation of the metal silicide film consumes all of the silicon layer.