| 主权项 |
1. Sensor chip, comprising
a substrate, a plurality of electrode elements arranged at a first level on the substrate, a plurality of gaps between neighbouring electrode elements, a metal structure arranged at a second level on the substrate, wherein the second level is different from the first level, wherein the metal structure extends over areas of the second level that are defined by projections of the gaps towards the second level, and wherein the gaps are at least partly filled with a dielectric material of a measuring layer for building a capacitive sensor, wherein the chip includes at least n electrode elements and n−1 gaps with n>2, wherein the n electrode elements represent n electrode fingers of at least one electrode structure, and in particular wherein the n electrode elements represent n electrode fingers of two interdigitating electrode structures, wherein the metal structure comprises multiple metal elements, wherein each metal element is assigned to one of the gaps for extending over an area of the second level that is defined by a projection of the assigned gap towards the second level and wherein each metal element covers an area between 10 percent smaller and 20 percent larger than that defined by the projection of the gap to which it is assigned. |
