发明名称 |
Interconnect structure and method of forming the same |
摘要 |
An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a low-k (LK) dielectric layer over a substrate; a first conductive feature in the LK dielectric layer, wherein the first conductive feature has a first sidewall, a second sidewall facing the first sidewall, and a first bottom surface contacting the LK dielectric layer; a first dielectric feature along an upper portion of the first sidewall, wherein a length of the first dielectric feature is at least 10 percent less than a length of the first sidewall; and a second dielectric feature along an upper portion of the second sidewall. The interconnect structure may also include a second conductive feature adjacent to the first conductive feature in the LK dielectric layer. |
申请公布号 |
US9142453(B1) |
申请公布日期 |
2015.09.22 |
申请号 |
US201414250234 |
申请日期 |
2014.04.10 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chiu Chien-Chih;Liang Ming-Chung |
分类号 |
H01L23/52;H01L21/768 |
主分类号 |
H01L23/52 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. An interconnect structure, comprising:
a low-k (LK) dielectric layer over a substrate; a first conductive feature in the LK dielectric layer, wherein the first conductive feature has a first sidewall, a second sidewall facing the first sidewall, and a first bottom surface directly contacting the LK dielectric layer; a first dielectric feature along an upper portion of the first sidewall, wherein a length of the first dielectric feature is at least 10 percent less than a length of the first sidewall; and a second dielectric feature along only an upper portion of the second sidewall. |
地址 |
Hsin-Chu TW |