Manufacturing method of semiconductor device and semiconductor device

摘要

A step of forming a stacked film serving as a lower electrode, a step of forming an insulating film serving as a capacitive film on the stacked film, and a step of patterning the insulating film and the stacked film are performed. In the step of forming the stacked film, a film containing titanium, a film containing titanium and nitrogen, a main conductive film containing aluminum, a film containing titanium, and a film containing titanium and nitrogen are sequentially formed from below. The ratio of the surface roughness of the upper surface of the stacked film to the thickness of the insulating film is 14% or less.

主权项

1. A manufacturing method of a semiconductor device comprising:
(a) a step of preparing a semiconductor substrate; (b) a step of forming a first insulating film on the semiconductor substrate; (c) a step of forming a first conductive film on the first insulating film; (d) a step of forming a second insulating film on the first conductive film; (e) a step of forming a second conductive film on the second insulating film; (f) a step of forming a first electrode made of the second conductive film by patterning the second conductive film; and (g) after the step (f), a step of forming a capacitive film made of the second insulating film and disposed under the first electrode and a second electrode made of the first conductive film and disposed under the capacitive film by patterning the second insulating film and the first conductive film, wherein, in the step (g), a capacitive element is formed from the first electrode, the capacitive film, and the second electrode, the step (c) includes: (c1) a step of forming a first film containing titanium on the first insulating film; (c2) a step of forming a second film containing titanium and nitrogen on the first film; (c3) a step of forming a third film containing aluminum on the second film; (c4) a step of forming a fourth film containing titanium on the third film; and (c5) a step of forming a fifth film containing titanium and nitrogen on the fourth film, in the step (c), the first conductive film composed of the first film, the second film, the third film, the fourth film, and the fifth film is formed by performing the step (c1), the step (c2), the step (c3), the step (c4), and the step (c5), and a ratio of a surface roughness of an upper surface of the first conductive film to a thickness of the second insulating film is 14% or less.