Power device packaging having backmetals couple the plurality of bond pads to the die backside

摘要

The present disclosure provides a power device and power device packaging. Generally, the power device of the present disclosure includes a die backside and a die frontside. A semi-insulating substrate with epitaxial layers disposed thereon is sandwiched between the die backside and the die frontside. Pads on the die frontside are coupled to the die backside with patterned backmetals that are disposed within vias that pass through the semi-insulating substrate and epitaxial layers from the die backside to the die frontside.

主权项

1. A power device with packaging comprising:
a die frontside; plurality of bond pads disposed on the die frontside; a die backside; a semi-insulating substrate with at least one gallium nitride (GaN) epitaxial layer disposed thereon being sandwiched between the die frontside and the die backside; and patterned backmetals disposed within vias that pass through the semi-insulating substrate and the at least one GaN epitaxial layer from the die backside to the die frontside, wherein substantial portions of the patterned backmetals extend directly along the die backside externally from the vias to couple the plurality of bond pads to the die backside.