Solid-state imaging device, method of manufacturing the same, and imaging apparatus

摘要

A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

主权项

1. A method of manufacturing a solid-state imaging device comprising the steps of:
forming a plurality of pixels and photoelectric conversion elements in a semiconductor substrate, each of the pixels in the plurality of pixels including at least one of the photoelectric conversion elements; forming at least one transistor element around the photoelectric conversion element, wherein the at least one transistor element is a shared transistor element that is shared by at least two of the photoelectric conversion elements, and a gate of the shared transistor element is surrounded by an element isolation region; and forming a sidewall isolation film on a side of the gate of the shared transistor element, wherein the sidewall isolation film is formed over a portion of the element isolation region.