发明名称 Middle-of-the-line constructs using diffusion contact structures
摘要 An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions.
申请公布号 US9142513(B2) 申请公布日期 2015.09.22
申请号 US201514645598 申请日期 2015.03.12
申请人 GLOBALFOUNDRIES INC. 发明人 Rashed Mahbub;Ma Yuansheng;Lin Irene;Stephens Jason;Deng Yunfei;Lei Yuan;K E Jongwook;Augur Roderick;Ahmed Shibly;Kengeri Subramani;Venkatesan Suresh
分类号 H01L23/538;H01L29/78;H01L27/092;H01L27/02 主分类号 H01L23/538
代理机构 Ditthavong & Steiner, P.C. 代理人 Ditthavong & Steiner, P.C.
主权项 1. A device comprising: a first diffusion region in a substrate; and first and second diffusion contact structures, wherein the first diffusion contact structure is provided via a first lithography process, the second diffusion contact structure is provided via a second lithography process, and the first diffusion contact structure is coupled to the first diffusion region and the second diffusion contact structure, wherein the first and second diffusion contact structures are couple together by stitching the first and second diffusion contact structures, such that the first and second diffusion contact structures include an overlapping area of the first and second diffusion contact structures, and the overlapping area of the first and second diffusion contact structures, in a plan view, covers less than all of the first and less than all of the second diffusion contact structures.
地址 Grand Cayman KY