Dicing die bond film and method of manufacturing semiconductor device

摘要

The present invention provides a dicing die bond film in which yielding and breaking of the dicing film are prevented and in which the die bond film can be suitably broken with a tensile force. In the dicing die bond film of the present invention, the tensile strength of the contact part in which the outer circumference of the push-up jig contacts the dicing film at 25° C. is 15 N or more and 80 N or less and the yield point elongation is 80% or more, the tensile strength of the wafer bonding part of the dicing film at 25° C. is 10 N or more and 70 N or less and the yield point elongation is 30% or more, [(the tensile strength of the contact part)−(the tensile strength of the wafer bonding part)] is 0 N or more and 60 N or less, and the breaking elongation rate of the die bond film at 25° C. is more than 40% and 500% or less.

主权项

1. A dicing die bond film comprising a die bond layer provided on a dicing layer, wherein:
the dicing layer has: a ring bonding part to which a dicing ring is bonded, the ring bonding part located at an outer circumference of the dicing layer,
a wafer bonding part to which a semiconductor wafer is bonded, the wafer bonding part located inward of the ring bonding part, anda contact part to which an outer circumference of a push-up jig contacts the dicing layer between the ring bonding part and the wafer bonding part, a tensile strength of the contact part of the dicing layer at 25° C. is 15 N or more and 80 N or less, and a yield point elongation of the contact part is 80% or more, a tensile strength of the wafer bonding part of the dicing layer at 25° C. is 10 N or more and 70 N or less, and a yield point elongation of the wafer bonding part is 30% or more, ((the tensile strength of the contact part)−(the tensile strength of the wafer bonding part)) is 0 N or more and 60 N or less, and a breaking elongation rate of the die bond layer at 25° C. is more than 40% and 500% or less.