| 发明名称 | ISFET switch | ||
| 摘要 | There is provided a semiconductor device for detecting a change in ion concentration of a sample and method of using same. The device can have a plurality of Field Effect Transistors (FETs) coupled to a common floating gate and an ion sensing layer exposed to the sample and coupled to the floating gate. There may be other input voltages coupled to the floating gate. | ||
| 申请公布号 | US9140663(B2) | 申请公布日期 | 2015.09.22 |
| 申请号 | US201113878402 | 申请日期 | 2011.10.10 |
| 申请人 | DNA ELECTRONICS LIMITED | 发明人 | Toumazou Christofer;Al-Ahdal Abdulrahman |
| 分类号 | G01N27/414;G11C16/04 | 主分类号 | G01N27/414 |
| 代理机构 | Maier & Maier, PLLC | 代理人 | Maier & Maier, PLLC |
| 主权项 | 1. A semiconductor device for detecting a change in ion concentration of a sample, the device comprising: a plurality of Field Effect Transistors (FETs) coupled to a common floating gate; and an ion sensing layer exposed to the sample and coupled to the floating gate; a circuit comprising the plurality of FETs to provide a digital output whose state depends on the ion concentration of the sample; and one or more first electrical input signals coupled to the floating gate for removing or adding a charge to the floating gate to set a switching threshold for the plurality of transistors. | ||
| 地址 | London GB | ||