| 发明名称 | Method for manufacturing an implant material | ||
| 摘要 | A method for manufacturing an implant material includes preparing a base material for implant, removing moisture from a chamber in which the base material is placed, and introducing material gas as a carbon source and a silicon source into the chamber after the removal of the moisture to form a carbon thin film containing a C—C component in which carbon atoms are bonded, and a SiC component in which carbon and silicon atoms are bonded on a surface of the base material by ionized deposition. | ||
| 申请公布号 | US9138507(B2) | 申请公布日期 | 2015.09.22 |
| 申请号 | US201414538664 | 申请日期 | 2014.11.11 |
| 申请人 | TOYO ADVANCED TECHNOLOGIES CO., LTD. | 发明人 | Nikawa Hiroki;Makihira Seichiyou;Mine Yuichi;Abe Yoshinori;Nakatani Tatsuyuki;Okamoto Keishi;Nitta Yuki |
| 分类号 | A61L27/02;A61L27/30;C23C16/30;A61K6/027 | 主分类号 | A61L27/02 |
| 代理机构 | Knobbe Martens Olson & Bear LLP | 代理人 | Knobbe Martens Olson & Bear LLP |
| 主权项 | 1. A method for manufacturing an implant material comprising: preparing a base material for implant; removing moisture from a chamber in which the base material is placed; and introducing material gas as a carbon source and a silicon source into the chamber after the removal of the moisture to form a carbon thin film containing a C—C component in which carbon atoms are bonded, and a SiC component in which carbon and silicon atoms are bonded on a surface of the base material by ionized deposition, wherein the base material is made of metal, the removal of the moisture is performed by baking an inside of the chamber at 80° C. or higher, and a molar ratio of SiO2 to the SiC component in the carbon thin film is 0.05 or lower. | ||
| 地址 | Hiroshima-Shi JP | ||