METHOD FOR MANUFACTURING OF ZNO:AL:AG PASSIVATION LAYER AND ZNO:AL:AG PASSIVATION LAYER THEREOF

摘要

The present invention relates to a method for manufacturing a ZnO:Al:Ag passivation layer and a ZnO:Al:Ag passivation layer manufactured thereby and, more particularly, to a method for manufacturing a ZnO:Al:Ag passivation layer which includes the steps of: forming a coating layer by spin-coating a silicon wafer with a ZnO:Al:Ag precursor solution (step one); and thermally treating the coating layer of the step one at a temperature between 400 and 700 degrees centigrade (step two). According to the method for manufacturing the ZnO:Al:Ag passivation layer according to the present invention, the silicon wafer with a high valid carrier lifetime is manufactured by a thermal treatment at a specific temperature from the precursor with a specific mole ratio of Ag and Al. Material costs are reduced and a manufacturing process is simplified in comparison with the existing method.