| 发明名称 |
Adapting read reference voltage in flash memory device |
| 摘要 |
In one embodiment, a method comprises determining an adaptation for a reference voltage used in a flash memory device as a function of a first count of items read from the flash memory device and a second count of items read from the flash memory device; and shifting the reference voltage at least in part by the adaptation. |
| 申请公布号 |
US9142312(B1) |
申请公布日期 |
2015.09.22 |
| 申请号 |
US201414179919 |
申请日期 |
2014.02.13 |
| 申请人 |
Marvell International Ltd. |
发明人 |
Yang Xueshi;Burd Gregory |
| 分类号 |
G11C16/00;G11C16/28;G11C16/34 |
主分类号 |
G11C16/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
determining a reference voltage adaptation for a reference voltage used in a flash memory device as a function of a first count of items read from the flash memory device and a second count of items read from the flash memory device; and shifting the reference voltage by an amount based at least in part by the reference voltage adaptation. |
| 地址 |
BM |
