发明名称 |
Non-aqueous electrolyte secondary battery, negative electrode, negative electrode material, and preparation of Si—O—Al composite |
摘要 |
A Si—O—Al composite comprising silicon, silicon oxide, and aluminum oxide exhibits a powder XRD spectrum in which the intensity of a signal of silicon at 28.3° is 1-9 times the intensity of a signal near 21°. A negative electrode material comprising the Si—O—Al composite is used to construct a non-aqueous electrolyte secondary battery which is improved in 1st cycle charge/discharge efficiency and cycle performance while maintaining the high battery capacity and low volume expansion upon charging of silicon oxide. |
申请公布号 |
US9142858(B2) |
申请公布日期 |
2015.09.22 |
申请号 |
US200912546788 |
申请日期 |
2009.08.25 |
申请人 |
Shin-Etsu Chemical Co., Ltd. |
发明人 |
Nakanishi Tetsuo;Watanabe Koichiro |
分类号 |
H01M4/131;H01M4/34;H01M4/36;H01M4/485;H01M4/38;H01M4/62;H01M10/0525;H01M4/134;H01M4/02 |
主分类号 |
H01M4/131 |
代理机构 |
Birch, Stewart, Kolasch & Birch, LLP |
代理人 |
Birch, Stewart, Kolasch & Birch, LLP |
主权项 |
1. A negative electrode material for non-aqueous electrolyte secondary batteries, comprising:
as an active material, a Si—O—Al composite consisting of silicon in a form of silicon crystallites, silicon oxide in a form of SiOx, wherein 0 <x≦2, and aluminum oxide in a form of aluminum trioxide Al2O3; and a binder, wherein said Si—O—Al composite exhibits on powder X-ray diffractometry a spectrum including a signal(s) in a range of 15° to 25° and a signal assigned to silicon at 28.3°, and an intensity of the signal at 28.3° is 1 to 9 times a maximum intensity of the signal(s) in the range of 15° to 25°, said Si—O—Al composite has a structure that the silicon crystallites of the silicon are dispersed in said Si—O—Al composite, said Si—O—Al composite exhibits on solid NMR (29Si-DDMAS) analysis a spectrum including a broad peak assigned in silicon dioxide centering near−110 ppm and a peak characteristics of diamond crystal of silicon near−84 ppm, and said binder is a polyimide resin. |
地址 |
Tokyo JP |