Display device and method for manufacturing the same

摘要

A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer.

主权项

1. A method of manufacturing a display device, the method comprising:
sequentially stacking a first metal layer, a gate insulating layer, and a polycrystalline silicon film on a substrate; patterning the polycrystalline silicon film, the gate insulating layer, and the first metal layer through a photolithography process using a single mask to pattern a polycrystalline silicon film pattern, a gate insulating layer pattern, and a first conductive film pattern; placing an interlayer insulating layer on the polycrystalline silicon film pattern; sequentially stacking a transparent conductive layer and a second metal layer on the interlayer insulating layer; and patterning the transparent conductive layer and the second metal layer as a second conductive film pattern.