| 发明名称 | Method and system for providing a magnetic junction configured for precessional switching using a bias structure | ||
| 摘要 | A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs precessional switching. | ||
| 申请公布号 | US9142758(B2) | 申请公布日期 | 2015.09.22 |
| 申请号 | US201213495830 | 申请日期 | 2012.06.13 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Apalkov Dmytro;Tang Xueti;Krounbi Mohamad Towfik;Nikitin Vladimir |
| 分类号 | G11C11/16;H01L43/08;H01L27/22 | 主分类号 | G11C11/16 |
| 代理机构 | Convergent Law Group LLP | 代理人 | Convergent Law Group LLP |
| 主权项 | 1. A magnetic junction for use in a magnetic device comprising: a first pinned layer having a first pinned layer magnetization, the first pinned layer magnetization being substantially in-plane; a first nonmagnetic spacer layer; and a free layer having an easy axis and a free layer magnetic moment, the first nonmagnetic spacer layer residing between the first pinned layer and the free layer, wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs switching based upon precession of the free layer magnetic moment around the easy axis of the free layer. | ||
| 地址 | Gyeonggi-Do KR | ||