Nonvolatile memory device and method of driving the same

摘要

A nonvolatile memory device includes a plurality of memory blocks, and a pass transistor array transmitting a plurality of drive signals to a selected memory block among the plurality of memory blocks in response to a block select signal. The pass transistor array includes high voltage transistors including one common drain and two sources formed in one active region and one of the plurality of drive signals transmitted to the common drain is transmitted to different memory blocks through the two sources.

主权项

1. A nonvolatile memory device comprising:
a plurality of memory blocks; a first pass transistor array configured to transmit a plurality of drive signals to a first memory block among the plurality of memory blocks in response to a first block selection signal; a second pass transistor array configured to transmit the plurality of drive signals to a second memory block among the plurality of memory blocks in response to the first block selection signal; and a third pass transistor array disposed between the first pass transistor array and the second pass transistor array, configured to transmit the plurality of drive signals to a third memory block among the plurality of memory blocks in response to a second block selection signal.